{"id":1427,"date":"2025-12-10T12:28:58","date_gmt":"2025-12-10T12:28:58","guid":{"rendered":"https:\/\/phys.usm.md\/?p=1427"},"modified":"2025-12-11T09:57:45","modified_gmt":"2025-12-11T09:57:45","slug":"cercetatorii-facultatii-au-publicat-un-nou-studiu-privind-cresterea-eficientei-led-urilor-rosii-pe-baza-de-ingan","status":"publish","type":"post","link":"https:\/\/phys.usm.md\/?p=1427","title":{"rendered":"Cercet\u0103torii facult\u0103\u021bii au publicat un nou studiu privind cre\u0219terea eficien\u021bei LED-urilor ro\u0219ii pe baz\u0103 de InGaN"},"content":{"rendered":"<p><span style=\"font-weight: 400;\">Cercet\u0103torii <\/span><b>V. P. Sirkeli, S. I. Caragacian, Iu. B. Boris \u0219i D. L. Nika<\/b><span style=\"font-weight: 400;\"> au publicat un nou articol \u00een revista interna\u021bional\u0103 <\/span><b><i>Physics of the Solid State<\/i><\/b><span style=\"font-weight: 400;\">:\u00a0<\/span><\/p>\n<p><span style=\"font-weight: 400;\">V.P. Sirkeli, S.I. Caragacian, I.B. Boris and D.L. Nika.<\/span> <span style=\"font-weight: 400;\">Effect of InAlGaN Interlayers on the Efficiency of InGaN-Based Red Light-Emitting Diodes.<\/span> <i><span style=\"font-weight: 400;\">Physics of the Solid State<\/span><\/i><b> 67<\/b><span style=\"font-weight: 400;\">, 655\u2013663 (2025): <\/span><a href=\"https:\/\/link.springer.com\/article\/10.1134\/S1063783425602188\"><span style=\"font-weight: 400;\">https:\/\/link.springer.com\/article\/10.1134\/S1063783425602188<\/span><\/a><\/p>\n<p><span style=\"font-weight: 400;\">Studiul prezint\u0103 o analiz\u0103 numeric\u0103 a modului \u00een care <\/span><b>interstraturile InAlGaN<\/b><span style=\"font-weight: 400;\"> influen\u021beaz\u0103 performan\u021ba LED-urilor ro\u0219ii pe baz\u0103 de InGaN. Autorii arat\u0103 c\u0103 introducerea unor astfel de interstraturi \u00eembun\u0103t\u0103\u021be\u0219te semnificativ eficien\u021ba \u0219i stabilitatea func\u021bional\u0103 a dispozitivelor. Dintre structurile analizate, LED-ul cu un <\/span><b>interstrat par\u021bial relaxat de compozi\u021bie In\u2080.\u2080\u2088Al\u2080.\u2083\u2085Ga\u2080.\u2085\u2087N<\/b><span style=\"font-weight: 400;\"> a ob\u021binut cele mai bune rezultate, emi\u021b\u00e2nd la <\/span><b>632 nm<\/b><span style=\"font-weight: 400;\">, cu o eficien\u021b\u0103 cuantic\u0103 intern\u0103 de 0,67, o eficien\u021b\u0103 cuantic\u0103 extern\u0103 de 33,5% \u0219i o eficien\u021b\u0103 \u201c<\/span><i><span style=\"font-weight: 400;\">wall-plug<\/span><\/i><span style=\"font-weight: 400;\">\u201d de 21,2%.<\/span><\/p>\n<p><b><i>Rezultatele contribuie la dezvoltarea unor LED-uri ro\u0219ii mai eficiente, esen\u021biale pentru aplica\u021bii optoelectronice avansate.<\/i><\/b><\/p>","protected":false},"excerpt":{"rendered":"<p>Cercet\u0103torii V. P. Sirkeli, S. I. Caragacian, Iu. B. Boris \u0219i D. L. Nika au publicat un nou articol \u00een revista interna\u021bional\u0103 Physics of the Solid State:\u00a0 V.P. Sirkeli, S.I. Caragacian, I.B. Boris and D.L. Nika. Effect of InAlGaN Interlayers on the Efficiency of InGaN-Based Red Light-Emitting Diodes. Physics of the Solid State 67, 655\u2013663&hellip; <br \/> <a class=\"read-more\" href=\"https:\/\/phys.usm.md\/?p=1427\">Cite\u0219te mai mult<\/a><\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[3],"tags":[],"class_list":["post-1427","post","type-post","status-publish","format-standard","hentry","category-noutati"],"rttpg_featured_image_url":null,"rttpg_author":{"display_name":"","author_link":"https:\/\/phys.usm.md\/?author=2"},"rttpg_comment":0,"rttpg_category":"<a href=\"https:\/\/phys.usm.md\/?cat=3\" rel=\"category\">Nout\u0103\u021bi<\/a>","rttpg_excerpt":"Cercet\u0103torii V. P. Sirkeli, S. I. Caragacian, Iu. B. Boris \u0219i D. L. Nika au publicat un nou articol \u00een revista interna\u021bional\u0103 Physics of the Solid State:\u00a0 V.P. Sirkeli, S.I. Caragacian, I.B. Boris and D.L. Nika. Effect of InAlGaN Interlayers on the Efficiency of InGaN-Based Red Light-Emitting Diodes. Physics of the Solid State 67, 655\u2013663&hellip;&hellip;","_links":{"self":[{"href":"https:\/\/phys.usm.md\/index.php?rest_route=\/wp\/v2\/posts\/1427","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/phys.usm.md\/index.php?rest_route=\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/phys.usm.md\/index.php?rest_route=\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/phys.usm.md\/index.php?rest_route=\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/phys.usm.md\/index.php?rest_route=%2Fwp%2Fv2%2Fcomments&post=1427"}],"version-history":[{"count":2,"href":"https:\/\/phys.usm.md\/index.php?rest_route=\/wp\/v2\/posts\/1427\/revisions"}],"predecessor-version":[{"id":1429,"href":"https:\/\/phys.usm.md\/index.php?rest_route=\/wp\/v2\/posts\/1427\/revisions\/1429"}],"wp:attachment":[{"href":"https:\/\/phys.usm.md\/index.php?rest_route=%2Fwp%2Fv2%2Fmedia&parent=1427"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/phys.usm.md\/index.php?rest_route=%2Fwp%2Fv2%2Fcategories&post=1427"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/phys.usm.md\/index.php?rest_route=%2Fwp%2Fv2%2Ftags&post=1427"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}